Job Description

Institute of Microelectronics (IME) is leading an R&D program dedicated to advancing critical process modules for next-generation device fabrication. The program emphasizes innovation in key areas such as ion implantation — an essential building block for high-performance devices.

This role focuses on developing expertise and leadership in ion implantation process technology, including lattice damage control, channeling effects, and post-implant recovery. We are seeking an individual with approximately 3 years of experience in ion implantation.

The successful candidate will independently manage ion implantation processes, perform implantation simulations, and apply deep knowledge of crystallography and ion-atom interactions. Strong understanding of implanters, thermal processing physics, beam optics, dosimetry systems, and vacuum technology is essential. The role also requires close collaboration with cross-functional teams, technology development groups, and customers. Additionally, the candidate will contribute expertise in compound semiconductor materials and support integration efforts across other process modules.

Key Responsibilities:

• Diagnose and Troubleshoot: Utilize advanced diagnostic tools and software to identify, analyze, and resolve equipment malfunctions, applying a strong understanding of ion implanter system functionality.
• Process Development: Support on-site ion implantation operations by creating, executing, and characterizing implantation recipes for validation, ensuring optimal dopant profiles and superior damage recovery.
• Vendor Collaboration: Work closely with equipment vendors to enhance system performance, improve process stability, and minimize tool downtime.
• Defect Analysis: Analyze implant-induced defect formation data to quantify impacts on device performance and develop strategies for defect reduction and process optimization.
• Operational Support: Review work orders and coordinate with equipment operators to diagnose and resolve equipment issues, identifying both mechanical and human factors contributing to failures.
• Experimental Design: Design and execute ion implantation experiments across a range of doses, energies, tilt, and twist angles to support process innovation and device performance enhancement.
  
  

Job Requirements:

• M.Sc. or Ph.D. in Electrical Engineering, Materials Science, Physics, or a related field.
• Minimum of 3 years of industrial experience in semiconductor device process development or high-energy ion implantation applications.
• Strong proficiency in medium- to high-energy/current ion implantation processes, with comprehensive knowledge of implanter systems, subsystems, and troubleshooting methods to minimize equipment downtime.
• Solid understanding of wide-bandgap semiconductor materials (e.g., SiC, GaN) and their relevant dopant species.
• Expertise in ion channelling, ion bombardment, and their impact on implant species profiles.
• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors.
• Familiarity with process simulation (e.g., SRIM/TRIM, Silvaco Athena, Sentaurus Process).
• Good publication record in semiconductor process or materials science journals.
• Ability to work collaboratively across multidisciplinary teams (process, metrology, device, modelling).
• Adept at mentoring and transferring knowledge to junior staff members.