Job Description

A*STAR Institute of Microelectronics (A*STAR IME) is leading an R&D initiative focused on advancing critical process modules for next-generation semiconductor device fabrication. One key area of innovation is ion implantation, an essential step in the fabrication of high-performance devices.

This position offers an opportunity to develop strong expertise in ion implantation process technology, including lattice damage control, channelling effects, and post-implant recovery. The process engineer will work closely with a Senior Scientist and cross-functional technology teams. The role integrates process simulation, experimental execution, and advanced materials characterization to enable robust and scalable process solutions.

Key Responsibilities:

• Process Support: Support the development and validation of ion implantation recipes to achieve targeted dopant profiles while minimizing lattice damage. Perform quantitative analysis of SIMS depth profiles, sheet-resistance (Rs) measurements, and RBS/channeling data to correlate process conditions.
• Ion activation: Optimize post-implant annealing conditions to maximize electrical dopant activation while minimizing residual lattice damage, supported by Rs, Hall, SIMS, and structural characterization.
• Defect Analysis: Analyze implant-induced defects using experimental data and simulations and contribute to strategies for defect suppression and recovery through process optimization.
• Ion-implant process development: Design and execute ion-implantation experiments with systematic variation of dose, energy, tilt, and rotation, and analyze results to improve device performance and process robustness.
• Operational Coordination: Review work orders, support equipment operators in resolving process-related issues, and work with equipment vendors to improve tool performance, stability, and uptime.
  
  

Job Requirements:

• Bachelor's or Master's degree in Electrical Engineering, Materials Science, Physics, or a related field.
• Basic understanding of solid-state physics, including ion implantation processes and dopant activation, familiarity with defect formation and recovery in semiconductors.
• Experience or academic exposure to process characterization and data analysis (SIMS, Rs, RBS/channeling).
• Familiarity with process simulation tools is preferred (e.g., SRIM/TRIM, Silvaco, Sentaurus Process, etc.).
• Candidates with no experience may apply.