Job Description

We are a leading research institute dedicated to advanced Wide‑Band Gap Semiconductor Technologies (SiC, GaN), cutting‑edge Photonics & Sensors, Flat Optics, MEMS and Advanced Packaging. Our mission is to push the boundaries of materials science, device physics, and wafer‑level processing to enable the next generation of high‑performance power electronics, optical communication systems, and quantum photonic platforms.

You will join a multidisciplinary team of scientists and engineers working at the intersection of materials science, electrical engineering, photonics, and advanced wafer processing.

Role Overview

We are seeking a highly experienced and self-driven research scientist who will be developing and identifying thermal oxidation and annealing process for Photonic IC & Sensors, SiC devices, and MEMS. The ideal candidate will bring deep expertise in thermal oxidation, high‑temperature annealing processes, RTP/RTA anneals, and interface engineering. You will lead research efforts to understand, model, and engineer oxide growth, interface defects, diffusion processes, stress relaxation, and material transformations under high‑temperature conditions.

Job Responsibilities:

Process R&D & Optimization

• Design and execute DOE to optimize dry/wet oxidation (O₂, H₂O), spacer oxidation, SAC/PAD OX, and anneals (H₂/N₂, forming gas) process.
• Develop post‑oxidation anneal recipes (e.g., N₂O/NO for interface quality) and/or RTP/RTA conditions (activation, de‑hydrogenation, stress relief) to meet electrical specs (e.g., Dit, Vbd, TDDB, BTI/HCI).
• Build/maintain growth/anneal models and SPC for thickness/EOT and uniformity.

Characterization, Equipment & Cross-function

• Correlate film and interface quality using spectroscopic ellipsometry, FTIR, stress/wafer bow, XPS, TEM/EDS/EELS, AFM, TXRF/ICP‑MS.
• Partner with teams of SiC/Photonic IC/MEMS/Advanced Packaging for industry and/or academic collaboration. Integration to link oxidation/anneal knobs to device Vt, leakage, mobility and reliability.
• Work with the equipment engineering team to identify hardware issue and carry out basic troubleshooting of faulty equipment.

Job Requirements:

• Degree (PhD based on job scope) or above in Electrical Engineering, Materials Science, Mechanical Engineering, Chemical Engineering, Chemistry, Physics or related fields.
• 3 years of working experience in Semiconductor Fabrication is advantageous.
• Experience in Dry/Wet oxidation, furnace annealing, RTO/RTP/RTA, activation or stress release process is highly desired.
• Strong background in thin‑film physics, oxide/interface science, and high‑temperature process kinetics would be critical.
• Hands-on experience in Design of Experiments (DOE), root cause analysis, and problem-solving methods is desired.
• Experience in Photonic IC, SiC devices, 2.5D/3D packaging and/or Wafer Bonding would be a plus.
• Experience in SiC process would be advantageous.
• Proficiency with materials and interface characterization tools, such as ellipsometry, FTIR, XPS/SIMS, TEM, SEM
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.