Role Overview

We are seeking a highly motivated, self-driven Scientist/Senior Scientist to lead the development and optimization of metal contact formation processes, with a strong focus on RTP-based silicidation and contact annealing for semiconductor devices.

The candidate will be responsible for developing and optimizing advanced metallization and contact processes (e.g., silicidation) using Rapid Thermal Processing (RTP/RTA) for next-generation semiconductor devices (e.g., CMOS, SiC devices, Photonic ICs, or 3D Packaging). The role requires driving process integration from R&D to pilot production, optimizing contact resistance (Rc), and ensuring high-temperature process reliability.

The candidate should possess strong expertise in rapid thermal processing (RTP/RTA), metal thin films, silicidation reactions, and interface engineering and will contribute to both fundamental research and process integration.

Responsibilities

Process R&D & Optimization

• Lead the development and optimization of metal contact and silicidation processes, including metal stack design, surface preparation, RTP/RTA conditions, and post-anneal treatments.
• Design and execute DoE to optimize metal deposition (sputtering) and silicidation (e.g., Ni, Co, Ti, NiPt, TiSi2, CoSi2, NiSi, etc.).
• Develop advanced processes for ohmic and Schottky contacts to target low contact resistance, improved interface quality, and thermal stability.
• Investigate metal-semiconductor reactions, diffusion behavior, phase formation, and interfacial defects to improve process performance.
• Establish process windows, control strategies, and SPC frameworks to ensure stable, repeatable operation. Work within a cleanroom environment, ensuring compliance with safety protocols for hazardous chemicals and high-temperature equipment.

Characterization, Equipment & Cross-function

• Proficiency in electrical and materials characterization techniques, including TLM, 4-point probe, SEM, TEM, XPS, SIMS, XRD, and AFM.
• Work closely with device and integration teams to link contact process parameters to device performance metrics, including contact resistance, leakage, mobility, and reliability.
• Support the integration of contact modules for the SiC, Si, GaN, Photonics, and MEMS departments.
• Collaborate with equipment engineering teams for RTP tool optimization, maintenance, and troubleshooting.
• Engage in industry and academic collaborations to advance next-generation contact technologies.

Qualifications

• Ph.D. degree in Electrical Engineering, Materials Science, Mechanical Engineering, Chemical Engineering, Chemistry, Physics, or related fields.
• For Research Scientist: 0-3 years of postdoctoral or industrial experience in semiconductor fabrication. For Senior Research Scientist: 3–5+ years of experience in advanced semiconductor R&D, specifically in contacts or RTP.
• Strong hands-on experience in rapid thermal processing (RTP/RTA), particularly in contact annealing, silicidation, or metal-semiconductor reactions.
• In-depth knowledge of silicide formation kinetics, thin-film physics, and contact physics (Schottky barrier, ohmic contacts, etc).
• Strong background in thin-film physics, metal diffusion, phase transformation (e.g., silicide formation), and high-temperature reaction kinetics is essential.
• Experience with surface preparation, pre-clean processes, and metal stack design for reliable contact formation is highly desirable.
• Proficiency in characterization tools: XRD, TEM/EDS, XPS, and electrical measurement setups (CTLM/TLM).