Job Description

We are seeking a motivated and experienced Senior Research Engineer to support the development of advanced Silicon Carbide (SiC) power semiconductor devices, focusing on Trench MOSFET and/or Superjunction MOSFET technologies.

The successful candidate will be responsible for process integration, device characterization, and performance optimization, working closely with device design, fabrication, and reliability teams to develop next-generation SiC power devices.

Process Integration & Device Development

• Develop, execute, and optimize process integration flows for SiC trench MOSFET and/or superjunction MOSFET fabrication.
• Coordinate wafer fabrication activities across multiple process modules, including lithography, etching, ion implantation, oxidation, annealing, metallization, and passivation.
• Identify process integration challenges, conduct root-cause analysis, and implement corrective actions to improve device performance, yield, and process reproducibility.
• Collaborate with process engineers and device designers to optimize fabrication processes and device structures.
• Plan and execute design-of-experiments (DOE) to evaluate process variations and their impact on device characteristics.

Device Characterization & Performance Optimization

• Perform wafer-level electrical characterization of SiC power MOSFETs, including static, dynamic, and reliability-related measurements.
• Extract and analyze key device parameters, including threshold voltage (Vth), specific on-resistance (Ron,sp), breakdown voltage (BV), leakage current, and gate oxide characteristics.
• Investigate device performance variations and correlate electrical results with fabrication conditions and device structures.
• Conduct device-level failure analysis and support troubleshooting of process- and design-related issues.
• Develop automated measurement and data analysis methodologies to improve characterization efficiency and consistency.

Research & Development

• Support the development and optimization of advanced SiC power device technologies targeting improved efficiency, performance, and reliability.
• Analyze experimental results, identify performance-limiting mechanisms, and propose technical solutions.
• Collaborate with internal researchers and external partners on technology development and research projects.
• Prepare technical reports, presentations, and research publications to communicate development progress and experimental findings.

Job Requirements

Education & Experience

• Bachelor's or Master's degree in Electrical Engineering, Microelectronics, Materials Science, Semiconductor Engineering, or a related discipline.
• At least 3–5 years of relevant experience in semiconductor device fabrication, process integration, or device characterization.
• Prior experience with SiC power semiconductor devices, particularly MOSFETs, is highly preferred.

Technical Skills

• Solid understanding of semiconductor device physics, particularly power MOSFET operation and characteristics.
• Hands-on experience in semiconductor wafer fabrication and process integration.
• Familiarity with trench MOSFET or superjunction MOSFET device structures and fabrication challenges.
• Experience in electrical characterization using semiconductor parameter analyzers, probe stations, or high-voltage measurement systems.
• Knowledge of semiconductor process control, statistical analysis, and experimental design.
• Proficiency in data analysis tools such as Python, MATLAB, or equivalent software is advantageous.
• Familiarity with TCAD simulation, device reliability testing, or failure analysis techniques is an added advantage.