We are seeking a talented and passionate Scientist/Senior Scientist to join our silicon carbide (SiC) crystal growth team. The successful candidate will play a crucial role in developing crystal growth technologies for semi-insulating SiC wafer production, which are used as substrates for RF and millimeter-wave GaN devices. This position is within the National Semiconductor Translation and Innovation Centre (NSTIC) ? GaN program.

Responsibilities:

• Lead and manage SiC crystal growth-related projects, including planning, execution, and reporting.
• Develop and optimize crystal growth technologies for semi-insulating silicon carbide (SiC) wafers used as substrates for RF and millimeter-wave GaN devices.
• Design, execute, and analyze SiC crystal growth experiments using physical vapor transport (PVT) and related growth techniques.
• Develop physics-based, data-driven, and digital twin models to improve growth rate, resistivity control, and wafer uniformity.
• Apply AI/ML methods and materials simulations to optimize crystal growth processes and predict material properties.
• Characterize SiC crystals and wafers, including resistivity, defect density, crystal quality, and uniformity.
• Collaborate closely with device, epitaxy, and integration teams to ensure material performance meets device requirements.
• Troubleshoot processes and equipment to maintain tool performance and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Action Plans (OCAPs), FMEA, SPC and other technical documentation.
• Work with external vendors to control the wafering process and produce SiC wafers from SiC boules.
• Guide equipment engineers in maintaining PVT and supporting tools to achieve tool uptime above 90%.
• Document experimental results, prepare technical reports, and contribute to publications, patents, and project reviews.
• Prepare and deliver technical presentations for internal reviews, conferences, and journals.
• Support technology transfer and scale-up activities aligned with NSTIC?GaN program objectives.
• Perform other related duties as assigned.

Requirements:

• PhD in Materials Science, Electrical Engineering, Physics, or a related discipline.
• 3 - 5 years of hands-on experience in silicon carbide (SiC) crystal growth using the Physical Vapor Transport (PVT) method.
• Experience with chamber-scale simulations for Physical Vapor Transport (PVT) processes.
• Strong background in SiC materials science and characterization of SiC wafers.
• Excellent communication skills, strong industry awareness, and proven problem-solving abilities.
• Highly motivated self-starter with the ability to work independently and collaboratively in a team environment.
• Prior industry experience is an advantage.