In this position within IME’s SiC department, you will be leading our SiC/GaN epitaxy and defect characterization efforts for development of next-generation SiC power MOSFETs and GaN HEMTs. You will interact with IME’s process module integration & device design team as well as key customers.|
- Development of CVD processes for high-quality SiC/GaN epitaxy on 6/8-inch substrates, with emphasis on high dopant & thickness uniformity and low extended defect density.
- Metrology and characterization of SiC/GaN epilayers (e.g. epilayer dopant & thickness uniformity).
- Optical & photoluminescence inspection of extended defects in SiC/GaN, including critical defects like micropipes, carrots, triangles, downfalls, SFs and BPDs.
- Tracking the evolution of extended crystal defects during MOSFET device processing, from bare substrates to wafer-level MOSFETs.
- Correlation of SiC/GaN extended crystal defects (type and density) with MOSFET performance & yield, and with MOSFET processing conditions.
- Simulations (Kinetic Monte Carlo & Computational Fluid Dynamics) for improved SiC/GaN epilayer uniformity and reduced defect density.
- Optical & photoluminescence inspection of extended defects in GaN-on-SiC epiwafers.
- Preparation of technical presentations and papers for internal meetings, as well as conferences and journals.
- Working with IME's power electronics related team to solve key technical challenges in the SiC/GaN power electronics industry.
- PhD in Materials Science / EE / Physics with minimum 5 years' hands-on experience in SiC/GaN epitaxy and defect characterization.
- Strong communication, industry awareness, and problem-solving skills.
- Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to "get things done"
- Industry experience is a plus.